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| S T M4952 S amHop Microelectronics C orp. May,24 2005 ver1.1 Dual P -C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) MAX ID -5.2A R DS (ON) S uper high dense cell design for low R DS (ON). 50 @ V G S = -4.5V 80 @ V G S = -2.5V R ugged and reliable. S urface Mount P ackage. D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed (300us Pulse Width) Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit -20 12 -5.2 -26 -1.7 2 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S T M4952 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = -250uA VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = -250uA VGS =-4.5V, ID = -5A VGS = -2.5V, ID = -3A VDS = -5V, VGS = -4.5V VDS = -15V, ID = - 4.9A Min Typ C Max Unit -20 -1 V uA 100 nA -0.6 -0.85 -1.5 V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 50 m-ohm 80 m-ohm -20 8 994 181 106 VD = -10V, R L =10 ohm ID = -1A, VGEN = -4.5V, R GE N = 10 ohm VDS =-10V, ID = - 1A, VGS =-4.5V 12 7.3 81.4 33.2 9.5 1.7 1.8 2 A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-10V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd ns ns ns ns nC nC nC S T M4952 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =-1.7A Min Typ C Max Unit 5 -0.89 -1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.Surface Mounted on FR 4 Board, t <=10sec. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. c.Guaranteed by design, not subject to production testing. 20 -V G S =3V 16 20 -V G S =10,9,8,7,6,5,4V 12 -V G S =2V 25 25 C -ID, Drain C urrent (A) -ID, Drain C urrent (A) 15 T j=125 C 10 -55 C 8 4 0 5 0 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 2.4 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 1500 1250 2.2 1.8 C is s F igure 2. Trans fer C haracteris tics V G S =-4.5V ID=-5A C , C apacitance (pF ) RDS(ON), On-Resistance (Normalized) 1000 750 500 250 0 C rs s 0 5 10 1.4 1.0 0.6 0.2 0 C os s 15 20 25 30 -50 -25 0 25 50 75 100 125 -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T M4952 1.2 1.0 0.8 0.6 0.4 0.2 V DS =V G S ID=-250uA B V DS S , Normalized Drain-S ource B reakdown V oltage -V th, Normalized G ate-S ource T hres hold V oltage 1.4 1.15 1.10 1.05 1.00 0.95 0.90 0.85 ID=-250uA 5 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 15 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 V G S =0V gFS , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 V DS =-15V 0 0 5 10 15 10.0 1.0 0.4 0.6 0.7 0.9 1.1 1.3 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 5 -ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 40 -V G S , G ate to S ource V oltage (V ) 4 3 2 1 0 0 VDS =-4.5V ID=-1A 10 R (O DS N) L im it 10 10 1s DC ms 0m s 1 0.1 0.03 VGS =-4.5V S ingle P ulse T A=25 C 0.1 1 10 20 30 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S T M4952 -VDD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% S V IN 50% 10% 50% INVE R TE D P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S T M4952 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 6 S T M4952 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 7 |
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